NGI uses twist to engineer 2D semiconductors with built-in memory functions — ScienceDaily - Verve Times
3/3/2022 12:00:00 AM3 years 2 months ago
by Addrew Shawn
by Addrew Shawn
A team of researchers at The University of Manchester's National Graphene Institute (NGI) and the National Physical Laboratory (NPL) has demonstrated that slightly twisted 2D transition metal dichalcogenides (TMDs) display room-temperature ferroelect
A team of researchers at The University of Manchester’s National Graphene Institute (NGI) and the National Physical Laboratory (NPL) has demonstrated that slightly twisted 2D transition metal dichalc… [+3495 chars]
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